NEWS
Open Innovations 2012
AIXTRON and Sigm Plus are going to participate in Moscow International Forum for Innovative Development. October 31 – November 3, 2012. Expocenter
More5x200 mm GaN-on-Si Technology for the AIX G5 Reactor Platform
AIXTRON SE has introduced a 5x200 mm GaN-on-Si technology package for its AIX G5 Planetary Reactor platform
MoreEpiGaN Successfully Starts 8-inch GaN-on-Si Development on AIXTRON Reactors
EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in 8” configuration.
MoreSaturn JSC expands solar cell production in Russia with further AIXTRON MOCVD system
Saturn JSC has ordered AIX 2800 G4-R 15x4-inch configuration deposition system including an automated wafer transfer system.
MoreOptogan Group becomes first in Europe to order AIXTRON CRIUS II systems for GaN LED production
CJSC Optogan has ordered two CRIUS II deposition systems, which will be used for gallium nitride (GaN) high-brightness LED production.
MoreAIXTRON’s New Generation AIX G5 System achieves aggressive productivity targets at Epistar
Next generation MOCVD Platform AIX G5 HT has demonstrated high quality GaN deposition at very high growth rates and high pressure above 600mbar and superior GaN/InGaN uniformities
MoreMETALORGANIC VAPOUR PHASE EPITAXY (MOVPE)
Sigm Plus offers the wide range of epitaxial heterostructures grown by MOCVD (or MOVPE).
Also our company is russian distributor of AIXTRON AG, leading provider of deposition equipment to the semiconductor industry (systems for compound, silicon and organic semiconductors).
Metalorganic vapour phase epitaxy (MOVPE)* is a chemical vapour deposition method of epitaxial growth of materials, especially semiconductors from the pyrolysis of organic compounds containing the required chemical elements. For example, gallium arsenide could be grown in a reactor on a substrate by introducing trimethyl gallium ((CH3)3Ga) and triphenyl arsenic (C6H5)3As). Alternative names for this process include organometallic vapour phase epitaxy (OMVPE), metalorganic chemical vapour deposition (MOCVD) and organometallic chemical vapour deposition (OMCVD). In contrast to molecular beam epitaxy (MBE) the growth of crystals takes place not in a vacuum, but from the gas phase at moderate pressures (2 to 100 kPa).
Basic principle of MOVPE process**:
- A gas mixture containing the precursors needed for growth, and if necessary for doping, is passed over a heated substrate.
- The precursor molecules pyrolyze leaving the atoms, e.g., Ga and As atoms on the substrate surface.
- The atoms bond to the substrate surface and a new crystalline layer is grown, in this case GaAs.
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Products made by MOVPE: |
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Semiconductor |
Device |
Application |
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AlGaInP |
LED, laser |
displays, DVD, automotive, traffic lights |
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InGaN |
blue LED |
displays, CD, automotive |
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AlGaAs |
laser |
CD, telecomm. |
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GaAs |
solar cells |
satellites, Sojourner |
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GaInP |
transistors, ICs |
cellular phones, radar |
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Requirements of Compound Semiconductor Industry:
- Uniformity of layer thickness and composition of ±1% on the wafer
- Temperature uniformity on wafer ΔT = ±1°C within a wide temperature range
- Wafer to wafer and run to run reproducibility
- Low cost of ownership, high wafer capacity, high up- time ratio
Why MOVPE?
- Very high quality of grown layers (high growth rate and doping uniformity/reproducibility)
- High throughput and no ultra high vacuum needed (compared to MBE), therefore economically advantageous, high system up-time
- Different materials can be grown in the same system, therefore highest flexibility
- Growth of sharp interfaces possible - therefore very suitable for heterostructures, e.g., multi quantum wells (MQW)
*From Wikipedia, the free encyclopedia
** From AIXTRON
