NEWS
Open Innovations 2012
AIXTRON and Sigm Plus are going to participate in Moscow International Forum for Innovative Development. October 31 – November 3, 2012. Expocenter
More5x200 mm GaN-on-Si Technology for the AIX G5 Reactor Platform
AIXTRON SE has introduced a 5x200 mm GaN-on-Si technology package for its AIX G5 Planetary Reactor platform
MoreEpiGaN Successfully Starts 8-inch GaN-on-Si Development on AIXTRON Reactors
EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in 8” configuration.
MoreSaturn JSC expands solar cell production in Russia with further AIXTRON MOCVD system
Saturn JSC has ordered AIX 2800 G4-R 15x4-inch configuration deposition system including an automated wafer transfer system.
MoreOptogan Group becomes first in Europe to order AIXTRON CRIUS II systems for GaN LED production
CJSC Optogan has ordered two CRIUS II deposition systems, which will be used for gallium nitride (GaN) high-brightness LED production.
MoreAIXTRON’s New Generation AIX G5 System achieves aggressive productivity targets at Epistar
Next generation MOCVD Platform AIX G5 HT has demonstrated high quality GaN deposition at very high growth rates and high pressure above 600mbar and superior GaN/InGaN uniformities
MoreAIXTRON’S NEW GENERATION AIX G5 SYSTEM ACHIEVES AGGRESSIVE PRODUCTIVITY TARGETS AT EPISTAR 2010-02-22
Aachen/Germany and Hsinchu/Taiwan, February 22, 2010 – AIXTRON AG (FSE: AIXA, ISIN DE000A0WMPJ6; NASDAQ: AIXG, ISIN US0096061041) today announced that its next generation MOCVD Platform AIX G5 HT has demonstrated high quality GaN deposition at very high growth rates and high pressure above 600mbar and superior GaN/InGaN uniformities. The epitaxial runs were performed at Epistar Corporation, located in the Hsinchu Science-based Industrial Park, Taiwan consecutively without reactor baking or swapping of any parts. The MOCVD reactor is now being transferred into mass production.
The Next Generation Platform AIX G5 HT provides the largest wafer capacity (56x2” / 14x4” / 8x6”) and comes with revolutionary new reactor design features that allow high growth rates and consecutive runs without baking or swapping of parts. In total, this results in a more than doubled high quality throughput compared to the previous generation.
The new reactor design provides highest process flexibility combined with superior process stability. AIX G5 HT systems provide fastest time to production with highest reproducibility from tool-to-tool, which enables a faster production ramp up as compared to any other reactor, with easy copy-and-paste process transfer, a key factor in a rapidly booming market with limited numbers of available process experts.
Dr. Ming-Jiunn Jou, President of Epistar, comments: “AIXTRON was committed to the challenging targets for the new reactor when we started our cooperation. Now we are amazed how quickly AIXTRON has met its commitments. Furthermore, the uniformities seen so far have given us confidence to significantly improve our production yield on this new MOCVD reactor. We are now very keen to bring this new tool into production and to benefit from its improvements.”
Gerd Strauch, Vice President Corporate Product Design & Engineering, and responsible for Planetary Reactor Development at AIXTRON AG comments: “I am very pleased to see this fast progress at Epistar, as it is in accordance with our expectations. It confirms the excellent target-oriented design of our new reactor chamber, and it is a proof of our advanced CFD modelling and system qualification at our own laboratory. We have successfully transferred the epitaxial growth performance from our laboratory 1:1 to the system at Epistar’s site.”
Original: www.aixtron.com.