NEWS
Open Innovations 2012
AIXTRON and Sigm Plus are going to participate in Moscow International Forum for Innovative Development. October 31 – November 3, 2012. Expocenter
More5x200 mm GaN-on-Si Technology for the AIX G5 Reactor Platform
AIXTRON SE has introduced a 5x200 mm GaN-on-Si technology package for its AIX G5 Planetary Reactor platform
MoreEpiGaN Successfully Starts 8-inch GaN-on-Si Development on AIXTRON Reactors
EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in 8” configuration.
MoreSaturn JSC expands solar cell production in Russia with further AIXTRON MOCVD system
Saturn JSC has ordered AIX 2800 G4-R 15x4-inch configuration deposition system including an automated wafer transfer system.
MoreOptogan Group becomes first in Europe to order AIXTRON CRIUS II systems for GaN LED production
CJSC Optogan has ordered two CRIUS II deposition systems, which will be used for gallium nitride (GaN) high-brightness LED production.
MoreAIXTRON’s New Generation AIX G5 System achieves aggressive productivity targets at Epistar
Next generation MOCVD Platform AIX G5 HT has demonstrated high quality GaN deposition at very high growth rates and high pressure above 600mbar and superior GaN/InGaN uniformities
MoreDOW CORNING EXPANDS EPITAXY CAPABILITY TO MEET GROWING SIC DEMAND USING AIXTRON HIGH THROUGHPUT SIC PLANETARY REACTOR 2009-10-19
Aachen/Germany, October 12, 2009 – Dow Corning and AIXTRON AG today announced that Dow Corning is extending its SiC epitaxy capabilities with the latest generation AIXTRON Planetary Reactor platform AIX 2800G4 WW for 10x100 mm and future 6x150 mm SiC wafers. The reactor is planned to be commissioned in the second quarter 2010.
Mark Loboda, Science and Technology Manager, Dow Corning Compound Semiconductor Solutions, said, “After a rigorous review, we selected the AIXTRON system to enable us to deliver the morphology, defect density and uniformity required by our customers. The added capacity and capability up to 150mm will allow us to meet our customer's rapidly growing needs for high power SiC device production.”
Dr. Frank Wischmeyer, Vice President and Managing Director, AIXTRON AB, Sweden added: “Building on over 10 years of experience with our SiC Hot-Wall Planetary Reactor technology, we are able to offer the proven next generation SiC AIX 2800G4 WW epitaxial production system. The enhanced productivity of the system is due to design features such as a central water cooled triple gas injector, improved process robustness and simplified maintenance procedures. Based on AIXTRON’s proven IC design, the AIX 2800G4 WW system shares a common platform with over 300 installed systems worldwide. AIXTRON is pleased to partner with Dow Corning Compound Semiconductor Solutions as they advance SiC devices into high volume low cost manufacturing.”