NEWS
Open Innovations 2012
AIXTRON and Sigm Plus are going to participate in Moscow International Forum for Innovative Development. October 31 – November 3, 2012. Expocenter
More5x200 mm GaN-on-Si Technology for the AIX G5 Reactor Platform
AIXTRON SE has introduced a 5x200 mm GaN-on-Si technology package for its AIX G5 Planetary Reactor platform
MoreEpiGaN Successfully Starts 8-inch GaN-on-Si Development on AIXTRON Reactors
EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in 8” configuration.
MoreSaturn JSC expands solar cell production in Russia with further AIXTRON MOCVD system
Saturn JSC has ordered AIX 2800 G4-R 15x4-inch configuration deposition system including an automated wafer transfer system.
MoreOptogan Group becomes first in Europe to order AIXTRON CRIUS II systems for GaN LED production
CJSC Optogan has ordered two CRIUS II deposition systems, which will be used for gallium nitride (GaN) high-brightness LED production.
MoreAIXTRON’s New Generation AIX G5 System achieves aggressive productivity targets at Epistar
Next generation MOCVD Platform AIX G5 HT has demonstrated high quality GaN deposition at very high growth rates and high pressure above 600mbar and superior GaN/InGaN uniformities
MoreSINGLE AND MULTIMODE FREE SPACE LASER DIODES
Single Mode Laser Diodes
Features:
- AlGaAs or InGaAs single or multi quantum well MOCVD structure
- index guided, single transverse mode
- 3µm x 1.5µm emitting area
- 9mm TO package
Available wavelength and power (at 25°C)
|
Wavelength, nm |
Output power, mW |
Package |
|
730..740 |
10 |
9mm package |
|
758..762 |
10 |
9mm package |
|
775..785 |
50 |
9mm package |
|
805..811 |
50, 100 |
9mm package |
|
840..860 |
50, 100 |
9mm package |
|
905..915 |
50, 100 |
9mm package |
|
950..970 |
50 |
9mm package |
|
970..990 |
50, 100 |
9mm package |
|
1020..1040 |
100 |
9mm package |
|
1055..1075 |
50 |
9mm package |
Multi Mode Laser Diodes
Features:
- AlGaAs or InGaAs single or multi quantum well MOCVD structure
- multimode diodes
- 30, 50 or 100µm stripe width
- 9mm package, 11mm package, C-mount
Available wavelength and power (at 25°C)
|
Wavelength, nm |
Output power, mW |
Package |
|
805..811 |
500 |
9mm package |
|
805..811 |
1000 |
11mm package |
|
840..860 |
500 |
9mm package |
|
975..981 |
1000, 2000 |
11mm package |
Laser diodes can be easily damaged by inadvertent electrical or static discharges (ESD). Therefore, extreme caution should be employed when handling the device. All standard ESD equipment should be employed including grounded tweezers and grounded wrist straps, grounding mats and shorting straps prior to device operation.
Drawings
9mm package drawing (dimensions in mm)
11.4mm package drawing (dimensions in mm)
